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2SD2142 Folha de dados(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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2SD2142 Folha de dados(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 2 page  Elektronische Bauelemente 2SD2142 0.3A , 40V NPN Plastic-Encapsulate Transistor 04-Mar-2011 Rev. B Page 1 of 2 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 1 Base 2 Emitter Collector 3 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE Darlington connection for a high hFE. High input impedance. MARKING PACKAGE INFORMATION Package MPQ LeaderSize SOT-23 3K 7’ inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 32 V Emitter to Base Voltage VEBO 12 V Collector Current - Continuous IC 300 mA Collector Power Dissipation PC 200 mW Thermal Resistance From Junction to Ambient RθJA 625 °C / W Junction, Storage Temperature TJ, TSTG 150, -55~150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO 40 - - V IC=100µA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 32 - - V IC=10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 12 - - V IE=100µA, IC=0 Collector Cut-Off Current ICBO - - 0.1 µA VCB=30V, IE=0 Emitter Cut-Off Current IEBO - - 0.1 µA VEB=12V, IC=0 DC Current Gain hFE 5000 - - VCE=3V, IC=100mA Collector to Emitter Saturation Voltage VCE(sat) - - 1.4 V IC=200mA, IB=0.2mA Transition Frequency fT - 200 - MHz VCE=5V, IC=10mA, f=100MHz Collector Output Capacitance Cob - 2.5 - pF VCB=10V, IE=0, f=1MHz SOT-23 Top View A L C B D G H J F K E 1 2 3 1 2 3 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 2.80 3.04 G 0.09 0.18 B 2.10 2.55 H 0.45 0.60 C 1.20 1.40 J 0.08 0.177 D 0.89 1.15 K 0.6 REF. E 1.78 2.04 L 0.89 1.02 F 0.30 0.50 R1M |
Nº de peça semelhante - 2SD2142_11 |
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Descrição semelhante - 2SD2142_11 |
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