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CSD17522Q5A Folha de dados(PDF) 2 Page - Texas Instruments

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Nome de Peças CSD17522Q5A
Descrição Electrónicos  30V, N-Channel NexFET Power MOSFETs
Download  9 Pages
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Fabricante Electrônico  TI1 [Texas Instruments]
Página de início  http://www.ti.com
Logo TI1 - Texas Instruments

CSD17522Q5A Folha de dados(HTML) 2 Page - Texas Instruments

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CSD17522Q5A
SLPS341
– JUNE 2011
www.ti.com
These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam
during storage or handling to prevent electrostatic damage to the MOS gates.
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Static Characteristics
BVDSS
Drain to Source Voltage
VGS = 0V, ID = 250μA
30
V
IDSS
Drain to Source Leakage Current
VGS = 0V, VDS = 24V
1
μA
IGSS
Gate to Source Leakage Current
VDS = 0V, VGS = +20 / –12V
100
nA
VGS(th)
Gate to Source Threshold Voltage
VDS = VGS, ID = 250μA
1.1
1.6
2.0
V
VGS = 4.5V, ID = 14A
10
12.4
m
RDS(on)
Drain to Source On Resistance
VGS = 10V, ID = 14A
6.7
8.1
m
gfs
Transconductance
VDS = 15V, ID = 14A
37
S
Dynamic Characteristics
Ciss
Input Capacitance
580
695
pF
Coss
Output Capacitance
VGS = 0V, VDS = 15V, f = 1MHz
390
470
pF
Crss
Reverse Transfer Capacitance
35
44
pF
RG
Series Gate Resistance
4.7
Qg
Gate Charge Total (4.5V)
3.6
4.3
nC
Qgd
Gate Charge Gate to Drain
1.1
nC
VDS = 15V, ID = 14A
Qgs
Gate Charge Gate to Source
1.6
nC
Qg(th)
Gate Charge at Vth
0.9
nC
Qoss
Output Charge
VDS = 13V, VGS = 0V
8.6
nC
td(on)
Turn On Delay Time
6.7
ns
tr
Rise Time
12
ns
VDS = 15V, VGS = 4.5V,
IDS = 14A, RG = 2Ω
td(off)
Turn Off Delay Time
10.5
ns
tf
Fall Time
3.7
ns
Diode Characteristics
VSD
Diode Forward Voltage
ISD = 14A, VGS = 0V
0.85
1
V
Qrr
Reverse Recovery Charge
19.6
nC
VDD= 13V, IF = 14A,
di/dt = 300A/
μs
trr
Reverse Recovery Time
17.8
ns
THERMAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
PARAMETER
MIN
TYP
MAX
UNIT
RθJC
Thermal Resistance Junction to Case(1)
1.8
°C/W
RθJA
Thermal Resistance Junction to Ambient(1)(2)
51
°C/W
(1)
RθJC is determined with the device mounted on a 1-inch
2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm ×
3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB. RθJC is specified by design, whereas RθJA is determined by the user’s board design.
(2)
Device mounted on FR4 material with 1-inch2 (6.45-cm2), 2-oz. (0.071-mm thick) Cu.
2
Copyright
© 2011, Texas Instruments Incorporated


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