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DAC7563SDSCT Folha de dados(PDF) 3 Page - Texas Instruments |
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DAC7563SDSCT Folha de dados(HTML) 3 Page - Texas Instruments |
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3 / 56 page  DAC8562, DAC8563 DAC8162, DAC8163 DAC7562, DAC7563 www.ti.com SLAS719C – AUGUST 2010 – REVISED JUNE 2011 ABSOLUTE MAXIMUM RATINGS (1) Over operating free-air temperature range (unless otherwise noted). VALUE UNIT AVDD to GND –0.3 to 6 V CLR, DIN, LDAC, SCLK and SYNC input voltage to GND –0.3 to AVDD + 0.3 V VOUT to GND –0.3 to AVDD + 0.3 V VREFIN/VREFOUT to GND –0.3 to AVDD + 0.3 V Operating temperature range –40 to 125 °C Junction temperature, maximum (TJ max) 150 °C (1) Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. THERMAL INFORMATION DAC856x, DAC816x, DAC756x THERMAL METRIC DSC DGS UNIT 10 PINS 10 PINS θJA Junction-to-ambient thermal resistance(1) 62.8 173.8 °C/W θJCtop Junction-to-case (top) thermal resistance(2) 44.3 48.5 °C/W θJB Junction-to-board thermal resistance(3) 26.5 79.9 °C/W ψJT Junction-to-top characterization parameter(4) 0.4 1.7 °C/W ψJB Junction-to-board characterization parameter(5) 25.5 68.4 °C/W θJCbot Junction-to-case (bottom) thermal resistance(6) 46.2 N/A °C/W (1) The junction-to-ambient thermal resistance under natural convection is obtained in a simulation on a JEDEC-standard, high-K board, as specified in JESD51-7, in an environment described in JESD51-2a. (2) The junction-to-case (top) thermal resistance is obtained by simulating a cold plate test on the package top. No specific JEDEC-standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. (3) The junction-to-board thermal resistance is obtained by simulating in an environment with a ring cold plate fixture to control the PCB temperature, as described in JESD51-8. (4) The junction-to-top characterization parameter, ψJT, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA, using a procedure described in JESD51-2a (sections 6 and 7). (5) The junction-to-board characterization parameter, ψJB, estimates the junction temperature of a device in a real system and is extracted from the simulation data for obtaining θJA , using a procedure described in JESD51-2a (sections 6 and 7). (6) The junction-to-case (bottom) thermal resistance is obtained by simulating a cold plate test on the exposed (power) pad. No specific JEDEC standard test exists, but a close description can be found in the ANSI SEMI standard G30-88. Copyright © 2010–2011, Texas Instruments Incorporated Submit Documentation Feedback 3 Product Folder Link(s): DAC8562 DAC8563 DAC8162 DAC8163 DAC7562 DAC7563 |
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