IRF9140 datasheet(1/2 Pages) SEME-LAB

Nome de Peças	IRF9140

Descrição Electrónicos	P-CHANNEL POWER MOSFET

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IRF9140

Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.

Prelim. 9/96

39.95 (1.573)

max.

17.15 (0.675)

16.64 (0.655)

30.40 (1.197)

30.15 (1.187)

1

2

4.09 (0.161)

3.84 (0.151)

dia.

2 plcs.

20.32 (0.800)

18.80 (0.740)

dia.

1.09 (0.043)

0.97 (0.038)

dia.

2 plcs.

VGS

Gate – Source Voltage

ID

Continuous Drain Current

(VGS = 0 , Tcase = 25°C)

ID

Continuous Drain Current

(VGS = 0 , Tcase = 100°C)

IDM

Pulsed Drain Current 1

PD

Power Dissipation @ Tcase = 25°C

Linear Derating Factor

EAS

Single Pulse Avalanche Energy 2

IAR

Avalanche Current 2

EAR

Repetitive Avalanche Energy 2

dv/dt

Peak Diode Recovery 3

TJ , Tstg

Operating and Storage Temperature Range

TL

Lead Temperature

1.6mm (0.63”) from case for 10 sec.

MECHANICAL DATA

Dimensions in mm (inches)

P–CHANNEL

POWER MOSFET

ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)

FEATURES

• HERMETICALLY SEALED TO–3 METAL

PACKAGE

• SIMPLE DRIVE REQUIREMENTS

• SCREENING OPTIONS AVAILABLE

TO–3 Metal Package

Pin 1 – Gate

Pin 2 – Source

Case – Drain

Notes

1) Pulse Test: Pulse Width

≤ 300µs, δ≤ 2%

2) @ VDD = –25V , L ≥ 2.3mH , RG = 25Ω , Peak IL = –18A , Starting TJ = 25°C

3) @ ISD ≤ –18A , di/dt ≤ –100A/µs , VDD ≤ BVDSS , TJ ≤ 150°C , Suggested RG = 9.1Ω

VDSS

–100V

ID(cont)

–18A

RDS(on)

0.2

Ω

±20V

–18A

–11A

–72A

125W

1W/°C

500mJ

–18A

12.5mJ

–5.5V/ns

–55 to +150°C

300°C

Nº de peça semelhante - IRF9140

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