IRF9240

IRF9240–SMD

Website: http://www.semelab.co.uk

Characteristic

Test Conditions

Min.

Typ.

Max.

Unit

–200

–2

–4

–100

100

–250

–1000

–11

0.35

0.5

46

1100

1300

375

450

150

250

70

90

55

15

20

30

10

15

12

18

812

5.0

12.5

Drain – Source Breakdown Voltage

Gate Threshold Voltage

Gate – Source Leakage Current (forward)

Gate – Source Leakage Current (reverse)

Zero Gate Voltage Drain Current

On State Drain Current 1

Static Drain – Source On-State Resistance

Forward Transconductance 1

Input capacitance

Output capacitance

Reverse transfer capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–on Delay Time

Rise Time

Turn-off Delay Time

Fall Time

Internal Drain Inductance

Internal Source Inductance

Characteristic

Min.

Typ.

Max.

Unit

1.0

0.1

30

300

Junction to Case

(TO-3 package only)

Case to Sink

(TO-3 package only)

Junction to Ambient

Max. Lead Temperature 0.063 ” from case for 10 sec.

(TO-3 package only)

°C/W

°C/W

°C/W

°C

THERMAL CHARACTERISTICS

Characteristic

Test Conditions

Min.

Typ.

Max.

Unit

–11

–44

–4.6

270

2.0

Continuous Source Current (Body Diode)

Pulsed Source Current1 (Body Diode)

Diode Forward Voltage2

Reverse Recovery Time

Reverse Recovery Charge

A

V

ns

mC

SOURCE – DRAIN DIODE RATINGS AND CHARACTERISTICS

f = 1MHz

V

V

nA

nA

mA

mA

A

W

S

pF

nC

ns

nH

nH

1) Pulse Test: Pulse Width < 300

mS , Duty Cycle £ 2%

2) Repetitive Rating: Pulse Width limited by maximum junction temperature.

Prelim. 7/00