KF5N50FZA datasheet(2/6 Pages) KEC

Nome de Peças	KF5N50FZA

Descrição Electrónicos	N CHANNEL MOS FIELD EFFECT TRANSISTOR

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Fabricante Electrônico	KEC [KEC(Korea Electronics)]

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2 / 6 page

2010. 8. 25

2/6

KF5N50FZA/FSA

Revision No : 0

ELECTRICAL CHARACTERISTICS (Tc=25

℃)

Note 1) Repetivity rating : Pulse width limited by junction temperature.

Note 2) L=19.5mH, IS=5A, VDD=50V, RG=25Ω, Starting Tj=25℃.

Note 3) IS≤5A, dI/dt≤100A/㎲, VDD≤BVDSS, Starting Tj=25℃.

Note 4) Pulse Test : Pulse width

≤300㎲, Duty Cycle≤2%.

Note 5) Essentially independent of operating temperature.

Marking

CHARACTERISTIC

SYMBOL

TEST CONDITION

MIN.

TYP.

MAX.

UNIT

Static

Drain-Source Breakdown Voltage

BVDSS

ID=250㎂ , VGS=0V

500

-

V

Breakdown Voltage Temperature Coefficient

ΔBVDSS/ΔTj ID=250㎂, Referenced to 25℃

-

0.55

-

V/

℃

Drain Cut-off Current

IDSS

VDS=500V, VGS=0V,

-

10

㎂

Gate Threshold Voltage

Vth

VDS=VGS, ID=250㎂

2.5

-

4.5

V

Gate Leakage Current

IGSS

VGS=±25V, VDS=0V

-

±10

㎂

Drain-Source ON Resistance

RDS(ON)

VGS=10V, ID=2.5A

-

1.15

1.4

Ω

Dynamic

Total Gate Charge

Qg

VDS=400V, ID=5A

VGS=10V

(Note4,5)

-

12

-

nC

Gate-Source Charge

Qgs

-

2.4

-

Gate-Drain Charge

Qgd

-

5.4

-

Turn-on Delay time

td(on)

VDD=250V

RL=50Ω

RG=25Ω

(Note4,5)

-

22.5

-

ns

Turn-on Rise time

tr

-

29

-

Turn-off Delay time

td(off)

-

58

-

Turn-off Fall time

tf

-

18

-

Input Capacitance

Ciss

VDS=25V, VGS=0V, f=1.0MHz

-

430

-

pF

Output Capacitance

Coss

-

71

-

Reverse Transfer Capacitance

Crss

-

7.5

-

Source-Drain Diode Ratings

Continuous Source Current

IS

VGS<Vth

-

5

A

Pulsed Source Current

ISP

-

20

Diode Forward Voltage

VSD

IS=5A, VGS=0V

-

1.4

V

Reverse Recovery Time

KF5N50FZA

trr

IS=5A, VGS=0V,

dIs/dt=100A/

㎲

-

300

-

ns

KF5N50FSA

-

150

-

Reverse Recovery Charge

KF5N50FZA

Qrr

-

4.8

-

μC

KF5N50FSA

-

0.42

-

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