KF13N50P datasheet(1/7 Pages) KEC

Nome de Peças	KF13N50P

Descrição Electrónicos	N CHANNEL MOS FIELD EFFECT TRANSISTOR

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Fabricante Electrônico	KEC [KEC(Korea Electronics)]

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2010. 8. 16

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SEMICONDUCTOR

TECHNICAL DATA

KF13N50P/F

N CHANNEL MOS FIELD

EFFECT TRANSISTOR

Revision No : 2

General Description

This planar stripe MOSFET has better characteristics, such as fast

switching time, low on resistance, low gate charge and excellent

avalanche characteristics. It is mainly suitable for electronic ballast and

switching mode power supplies.

FEATURES

・VDSS= 500V, ID= 13A

・Drain-Source ON Resistance :

RDS(ON)=0.44Ω(Max) @VGS = 10V

・Qg(typ.) = 35nC

MAXIMUM RATING (Tc=25

℃)

* : Drain current limited by maximum junction temperature.

CHARACTERISTIC

SYMBOL

RATING

UNIT

KF13N50P

KF13N50F

Drain-Source Voltage

VDSS

500

V

Gate-Source Voltage

VGSS

±30

V

Drain Current

@TC=25℃

ID

13

13*

A

@TC=100℃

8

8*

Pulsed (Note1)

IDP

40

40*

Single Pulsed Avalanche Energy

(Note 2)

EAS

860

mJ

Repetitive Avalanche Energy

(Note 1)

EAR

19.5

mJ

Peak Diode Recovery dv/dt

(Note 3)

dv/dt

4.5

V/ns

Drain Power

Dissipation

Tc=25

℃

PD

208

49.8

W

Derate above 25

℃

1.66

0.4

W/

℃

Maximum Junction Temperature

Tj

150

℃

Storage Temperature Range

Tstg

-55

～150

℃

Thermal Characteristics

Thermal Resistance, Junction-to-Case

RthJC

0.6

2.51

℃/W

Thermal Resistance, Junction-to-

Ambient

RthJA

62.5

℃/W

KF13N50F

KF13N50P

EQUIVALENT CIRCUIT

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