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ESAC85-009R Folha de dados(PDF) 1 Page - Fuji Electric |
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ESAC85-009R Folha de dados(HTML) 1 Page - Fuji Electric |
1 / 6 page 1 ESAC85-009R http://www.fujisemi.com FUJI Diode Schottky Barrier Diode Maximum Rating and Characteristics Maximum ratings (at Ta=25˚C unless otherwise specified.) Item Symbols Conditions Ratings Units Repetitive peak surge reverse voltage VRSM tw=500ns, duty=1/40 100 V Repetitive peak reverse voltage VRRM - 90 V Average output current Io 50Hz Square wave duty =1/2 Tc = 109˚C 10 * A Non-repetitive forward surge current** IFSM Sine wave, 10ms 1shot 80 A Operating junction temperature Tj - 150 ˚C Storage temperature Tstg - -40 to +150 ˚C Note* Out put current of center tap full wave connection. Note** Rating per element Electrical characteristics (at Ta=25˚C unless otherwise specified.) Item Symbols Conditions Maximum Units Forward voltage*** VF IF = 4A 0.9 V Reverse current*** IR VR =VRRM 5 mA Thermal resistance Rth(j-c) Junction to case 3 ˚C/W Note*** Rating per element Mechanical characteristics Item Conditions Maximum Units Mounting torque Recommended torque 0.3 to 0.5 N•m Approximate mass - 2 g |
Nº de peça semelhante - ESAC85-009R |
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Descrição semelhante - ESAC85-009R |
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