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FMI13N60E Folha de dados(PDF) 1 Page - Fuji Electric

Nome de Peças FMI13N60E
Descrição Electrónicos  N-CHANNEL SILICON POWER MOSFET
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Fabricante Electrônico  FUJI [Fuji Electric]
Página de início  http://www.fujielectric.co.jp/eng/fdt/scd
Logo FUJI - Fuji Electric

FMI13N60E Folha de dados(HTML) 1 Page - Fuji Electric

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FMI13N60E
FUJI POWER MOSFET
Super FAP-E3 series
N-CHANNEL SILICON POWER MOSFET
Features
Maintains both low power loss and low noise
Lower RDS(on) characteristic
More controllable switching dv/dt by gate resistance
Smaller VGS ringing waveform during switching
Narrow band of the gate threshold voltage (3.0±0.5V)
High avalanche durability
Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters
Maximum Ratings and Characteristics
Absolute Maximum Ratings at Tc=25°C (unless otherwise specified)
Description
Symbol
Characteristics
Unit
Remarks
Drain-Source Voltage
VDS
600
V
VDSX
600
V
VGS = -30V
Continuous Drain Current
ID
±13
A
Pulsed Drain Current
IDP
±52
A
Gate-Source Voltage
VGS
±30
V
Repetitive and Non-Repetitive Maximum Avalanche Current
IAR
13
A
Note*1
Non-Repetitive Maximum Avalanche Energy
EAS
471.5
mJ
Note*2
Repetitive Maximum Avalanche Energy
EAR
22.5
mJ
Note*3
Peak Diode Recovery dV/dt
dV/dt
5.2
kV/µs
Note*4
Peak Diode Recovery -di/dt
-di/dt
100
A/µs
Note*5
Maximum Power Dissipation
PD
1.67
W
Ta=25°C
225
Tc=25°C
Operating and Storage Temperature range
Tch
150
°C
Tstg
-55 to + 150
°C
Outline Drawings [mm]
Equivalent circuit schematic
Electrical Characteristics at Tc=25°C (unless otherwise specified)
Description
Symbol
Conditions
min.
typ.
max.
Unit
Drain-Source Breakdown Voltage
BVDSS
ID=250µA, VGS=0V
600
-
-
V
Gate Threshold Voltage
VGS (th)
ID=250µA, VDS=VGS
2.5
3.0
3.5
V
Zero Gate Voltage Drain Current
IDSS
VDS=600V, VGS=0V
Tch=25°C
-
-
25
µA
VDS=480V, VGS=0V
Tch=125°C
-
-
250
Gate-Source Leakage Current
IGSS
VGS=±30V, VDS=0V
-
10
100
nA
Drain-Source On-State Resistance
RDS (on)
ID=6.5A, VGS=10V
-
0.50
0.58
Forward Transconductance
gfs
ID=6.5A, VDS=25V
7.5
15
-
S
Input Capacitance
Ciss
VDS=25V
VGS=0V
f=1MHz
-
2150
3225
pF
Output Capacitance
Coss
-
190
285
Reverse Transfer Capacitance
Crss
-
14
21
Turn-On Time
td(on)
Vcc=300V
VGS=10V
ID=6.5A
RGS=10Ω
-
21
31.5
ns
tr
-
8
12
Turn-Off Time
td(off)
-
100
150
tf
-
15
22.5
Total Gate Charge
QG
Vcc=300V
ID=13A
VGS=10V
-
60
90
nC
Gate-Source Charge
QGS
-
17
25.5
Gate-Drain Charge
QGD
-
18
27
Avalanche Capability
IAV
L=2.36mH, Tch=25°C
13
-
-
A
Diode Forward On-Voltage
VSD
IF=13A, VGS=0V, Tch=25°C
-
0.90
1.08
V
Reverse Recovery Time
trr
IF=13A, VGS=0V
-di/dt=100A/µs, Tch=25°C
-
0.7
-
µs
Reverse Recovery Charge
Qrr
-
8
-
µC
Note *1 : Tch≤150°C
Note *2 : Stating Tch=25°C, IAS=6A, L=24.0mH, Vcc=60V, RG=50Ω
EAS limited by maximum channel temperature and avalanche current.
See to 'Avalanche Energy' graph.
Thermal Characteristics
Description
Symbol
Test Conditions
min.
typ.
max.
Unit
Thermal resistance
Rth (ch-c)
Channel to case
0.560
°C/W
Rth (ch-a)
Channel to ambient
75.0
°C/W
Gate(G)
Source(S)
Drain(D)
Note *3 : Repetitive rating : Pulse width limited by maximum channel temperature.
See to the 'Transient Themal impeadance' graph.
Note *4 : IF≤-ID, -di/dt=100A/µs, Vcc≤BVDSS, Tch≤150°C.
Note *5 : IF≤-ID, dv/dt=5.2kV/µs, Vcc≤BVDSS, Tch≤150°C.
T-Pack(L)


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