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BC546BG Folha de dados(PDF) 1 Page - ON Semiconductor

Nome de Peças BC546BG
Descrição Electrónicos  Amplifier Transistors
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© Semiconductor Components Industries, LLC, 2007
March, 2007 − Rev. 6
1
Publication Order Number:
BC546/D
BC546B, BC547A, B, C,
BC548B, C
Amplifier Transistors
NPN Silicon
Features
Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector - Emitter Voltage
BC546
BC547
BC548
VCEO
65
45
30
Vdc
Collector - Base Voltage
BC546
BC547
BC548
VCBO
80
50
30
Vdc
Emitter - Base Voltage
VEBO
6.0
Vdc
Collector Current − Continuous
IC
100
mAdc
Total Device Dissipation @ TA = 25°C
Derate above 25
°C
PD
625
5.0
mW
mW/
°C
Total Device Dissipation @ TC = 25°C
Derate above 25
°C
PD
1.5
12
W
mW/
°C
Operating and Storage Junction
Temperature Range
TJ, Tstg
−55 to +150
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient
RqJA
200
°C/W
Thermal Resistance, Junction−to−Case
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
1 2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 17
MARKING DIAGRAM
BC
54x
AYWW
G
G
x
= 6, 7, or 8
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)


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