KSD-T5C043-002

2

STK003SF

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Drain-source breakdown voltage

30

-

-

V

Gate threshold voltage

0.6

-

1.2

V

Drain-source cut-off current

-

-

1

uA

Gate leakage current

-

-

100

nA

Drain-source on-resistance

④

-

27

40

m

-

39

78

Forward transfer conductance

④

-

11.8

-

S

Input capacitance

Ciss

f=1MHz

-

373

-

pF

Output capacitance

Coss

-

68

-

Reverse transfer capacitance

Crss

-

45

-

Turn-on delay time

③④

-

3.6

-

ns

Rise time

-

5.1

-

Turn-off delay time

-

24

-

Fall time

-

5.1

-

Total gate charge

-

8.8

13

nC

Gate-source charge

-

0.9

1.4

Gate-drain charge

-

1.8

2.7

Characteristic

Symbol

Test Condition

Min.

Typ.

Max.

Unit

Continuous source current

Integral reverse diode

in the MOSFET

-

-

0.5

A

Source current (Pulsed)

①

-

-

2.0

Forward voltage

④

-

0.7

1.2

V

Reverse recovery time

-

26

-

ns

Reverse recovery charge

-

120

-

uC

Note ;

①

Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature

②

③

Pulse Test : Pulse width≤300us, Duty cycle≤2%

④

Essentially independent of operating temperature