74AHCT1G00SE-7 datasheet(4/8 Pages) DIODES

Nome de Peças	74AHCT1G00SE-7

Descrição Electrónicos	SINGLE 2 INPUT POSITIVE NAND GATE

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4 / 8 page

74AHCT1G00

SINGLE 2 INPUT POSITIVE NAND GATE

74AHCT1G00

Document number: DS35179 Rev. 1- 2

4 of 8

www.diodes.com

May 2011

Electrical Characteristics

Symbol

Parameter

Test Conditions

VCC

25ºC

-40ºC to 85ºC

-40ºC to 125ºC

Unit

Min

Typ. Max

Min

Max

Min

Max

VOH

High Level

Output Voltage

IOH = -50μA

4.5V

4.4

4.5

4.4

V

IOH = -8mA

4.5V

3.94

3.8

3.70

VOL

Low Level

Output Voltage

IOL = 50μA

4.5V

0

0.1

V

IOL = 8mA

4.5V

0.36

0.44

0.55

II

Input Current

VI = 5.5V or GND

0 to 5.5V

± 0.1

± 1

± 2

μA

ICC

Supply Current

VI = 5.5V or GND

IO=0

5.5V

1

10

40

μA

Ci

Input

Capacitance

VI = VCC – or

GND

5.5V

2.0

10

pF

ΔICC

Additional

Supply Current

One input at 3.4V

Other inputs at

VCC or GND

5.5V

1.35

1.5

mA

θJA

Thermal

Resistance

Junction-to-

Ambient

SOT25

(Note 4)

204

oC/W

SOT353

371

θJC

Thermal

Resistance

Junction-to-

Case

SOT25

(Note 4)

52

oC/W

SOT353

143

Note:

4. Test conditions for SOT25, and SOT353: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

Switching Characteristics

VCC = 5V ± 0.5V (see Figure 1)

Parameter

From

(Input)

TO

(OUTPUT)

25ºC

-40ºC to 85ºC

-40ºC to 125ºC

Unit

Min

Typ.

Max

Min

Max

Min

Max

tpd

A or B

Y

CL=15pF

0.6

3.6

6.2

0.6

7.1

0.6

8.0

ns

CL=50pF

0.6

5.0

7.9

0.6

9.0

0.6

10.0

ns

Operating Characteristics

TA = 25 ºC

Parameter

Test

Conditions

VCC = 5V

Unit

Typ.

Cpd

Power dissipation capacitance

f = 1 MHz

No Load

11

pF

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