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74LVC1G10FW4-7 Folha de dados(PDF) 5 Page - Diodes Incorporated

Nome de Peças 74LVC1G10FW4-7
Descrição Electrónicos  SINGLE 3 INPUT POSITIVE NAND GATE
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Fabricante Electrônico  DIODES [Diodes Incorporated]
Página de início  http://www.diodes.com
Logo DIODES - Diodes Incorporated

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74LVC1G10
SINGLE 3 INPUT POSITIVE NAND GATE
74LVC1G10
Document number: DS35121 Rev. 3 - 2
5 of 13
www.diodes.com
July 2011
© Diodes Incorporated
Electrical Characteristics TA = -40°C to 125°C (All typical values are at VCC = 3.3V, TA = 25°C)
Symbol
Parameter
Test Conditions
VCC
Min
Typ.
Max
Unit
VOH
High Level Output
Voltage
IOH = -100μA
1.65V to 5.5V
VCC – 0.1
V
IOH = -4mA
1.65V
0.95
IOH = -8mA
2.3V
1.7
IOH = -16mA
3V
1.9
IOH = -24mA
2.0
IOH = -32mA
4.5V
3.4
VOL
High-level Input Voltage
IOL = 100μA
1.65V to 5.5V
0.1
V
IOL = 4mA
1.65V
0.70
IOL = 8mA
2.3V
0.45
IOL = 16mA
3V
0.60
IOL = 24mA
0.80
IOL = 32mA
4.5V
0.80
II
Input Current
VI = 5.5 V or GND
0 to 5.5V
± 20
μA
IOFF
Power Down Leakage
Current
VI or VO = 5.5V
0
± 20
μA
ICC
Supply Current
VI = 5.5V of GND
IO=0
1.65V to 5.5V
40
μA
ΔICC
Additional Supply
Current
Input at VCC –0.6V
3V to 5.5V
5000
μA
Ci
Input Capacitance
Vi = VCC – or GND
3.3
4
pF
θJA
Thermal Resistance
Junction-to-Ambient
SOT26
(Note 4)
204
oC/W
SOT363
371
DFN1410
430
DFN1010
510
θJC
Thermal Resistance
Junction-to-Case
SOT26
(Note 4)
52
oC/W
SOT363
143
DFN1410
190
DFN1010
250
Package Characteristics (All typical values are at Vcc = 3.3V, TA = 25°C)
Symbol
Parameter
Test Conditions
VCC
Min
Typ.
Max
Unit
CI
Input Capacitance
VI = VCC – or GND
3.3
3.5
pF
θJA
Thermal Resistance
Junction-to-Ambient
SOT26
(Note 4)
204
oC/W
SOT363
371
DFN1410
430
DFN1010
510
θJC
Thermal Resistance
Junction-to-Case
SOT26
(Note 4)
52
oC/W
SOT363
143
DFN1410
190
DFN1010
250
Notes:
4. Test condition for SOT26, SOT363, DFN1410 and DFN1010 : Device mounted on FR-4 substrate PC board, 2oz copper, with minimum
recommended pad layout.


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