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BD3988FV Folha de dados(PDF) 3 Page - Rohm

Nome de Peças BD3988FV
Descrição Electrónicos  Silicon Monolithic Integrated Circuit
Download  5 Pages
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Fabricante Electrônico  ROHM [Rohm]
Página de início  http://www.rohm.com
Logo ROHM - Rohm

BD3988FV Folha de dados(HTML) 3 Page - Rohm

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REV. B
○BLOCK DIAGRAM
○PIN No.・PIN NAME
※Refer to the Technical Note about the details of the application.
○OPERATING NOTES
1) Absolute maximum ratings
Use of the IC in excess of absolute maximum ratings such as the applied voltage or operating temperature range may result
in IC damage. Assumptions should not be made regarding the state of the IC (short mode or open mode) when such damage is
suffered. A physical safety measure such as a fuse should be implemented when use of the IC in a special mode where the
absolute maximum ratings may be exceeded is anticipated.
2) VEE potential
Ensure a minimum VEE pin potential in all operating conditions.
3) Thermal design
Use a thermal design that allows for a sufficient margin in light of the power dissipation (Pd) in actual operating
conditions.
4) Pin short and mistake mounting
Use caution when orienting and positioning the IC for mounting on printed circuit boards. Improper mounting may result
in damage to the IC. Shorts between output pins and the power supply and GND pins caused by the presence of a foreign object
may result in damage to the IC. Ensure a minimum GND pin potential in all operating conditions.
5) Actions in strong magnetic field
Keep in mind that the IC may malfunction in strong magnetic fields.
6) Testing on application boards
When testing the IC on an application board, connecting a capacitor to a pin with low impedance subjects the IC to stress.
Always discharge capacitors after each process or step. Always turn the IC's power supply off before connecting it to or
removing it from a jig or fixture during the inspection process. Ground the IC during assembly steps as an antistatic measure,
and use similar caution when transporting or storing the IC.
7) This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them isolated.
P/N junctions are formed at the intersection of these P layers with the N layers of other elements to create a variety
of parasitic elements. For example, when the resistors and transistors are connected to the pins as shown in the following
figure,
The P/N junction functions as a parasitic diode when VEE > Pin A for the resistor or VEE > Pin B for the transistor(NPN).
Similarly, when VEE > Pin B for the transistor (NPN), the parasitic diode described above combines with the N layer
of other adjacent elements to operate as a parasitic NPN transistor.
Pin No.
Pin Name
1
REG1
2
VCC
3
REG2
4
VEE
5
CTL2
6
STB
7
GND
8
CTL1
VCC
TSD
BandGap
GND
STB
VEE
VCC
REG2
+
-
-
+
REG1
CTL1
CTL2
Discharge
Block
OCP
1
2
3
4
5
6
7
8
VEE


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