2N2369A

Document Number 5277

Issue 2

HIGH SPEED, MEDIUM POWER, NPN

SWITCHING TRANSISTOR IN A

HERMETICALLY SEALED

TO-18 PACKAGE

FOR HIGH RELIABILITY APPLICATIONS

FEATURES

• SILICON PLANAR EPITAXIAL NPN

TRANSISTOR

• HERMETIC TO18 PACKAGE

• CECC SCREENING OPTIONS

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Collector Current

Total Device Dissipation

Derate above 25°C

Total Device Dissipation

Derate above 25°C

Operating and Storage Temperature Range

R

Thermal Resistance Junction-Case

R

Thermal Resistance Junction-Ambient

40V

15V

4.5V

200mA

360mW

2.06mW / °C

680mW

6.85mW / °C

–65 to +200°C

146°C/W

486°C/W

MECHANICAL DATA

Dimensions in mm (inches)

TO-18 (TO-206AA)

Pin 1 – Emitter

Underside View

Pin 2 – Base

Pin 3 – Collector



!

2 . 5 4 ( 0 . 1 0 0 )

N o m .

0 . 4 8 ( 0 . 0 1 9 )

0 . 4 1 ( 0 . 0 1 6 )

d i a .

5 . 8 4 ( 0 . 2 3 0 )

5 . 3 1 ( 0 . 2 0 9 )

4 . 9 5 ( 0 . 1 9 5 )

4 . 5 2 ( 0 . 1 7 8 )

5

.

3

3

(

0

.

2

1

0

)

4

.

3

2

(

0

.

1

7

0

)

1

2

.

7

(

0

.

5

0

0

)

m

i

n

.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and

reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that

datasheets are current before placing orders.