SILICON EPITAXIAL

NPN TRANSISTOR

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verify that datasheets are current before placing orders.

Semelab Limited

Semelab Limited

Semelab Limited

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Document Number 8301

Issue 1

Page 1 of 3

2N4914

•

Low Collector Saturation Voltage.

•

Hermetic TO3 Metal Package.

•

Designed For General Purpose, Switching

and Power Amplifier Applications

•

Screening Options Available

C = 25°C unless otherwise stated)

VCBO

Collector – Base Voltage

60V

VCEO

Collector – Emitter Voltage

60V

VEBO

Emitter – Base Voltage

5V

IC

Continuous Collector Current

5A

IB

Base Current

1.0A

PD

Total Power Dissipation at

TC = 25°C

87.5W

Derate Above 25°C

0.5W/°C

TJ

Junction Temperature Range

-65 to +200°C

Tstg

Storage Temperature Range

-65 to +200°C

THERMAL PROPERTIES

Symbols

Parameters

Min.

Typ.

Max.

Units

RθJC

Thermal Resistance, Junction To Case

2

°C/W