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TSB1412 Folha de dados(PDF) 1 Page - Taiwan Semiconductor Company, Ltd |
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TSB1412 Folha de dados(HTML) 1 Page - Taiwan Semiconductor Company, Ltd |
1 / 4 page TSB1412 Low Vcesat PNP Transistor 1/4 Version: B11 TO-252 (DPAK) PRODUCT SUMMARY BVCBO -40V BVCEO -30V IC -5A VCE(SAT) -0.5V @ IC / IB = -4A / -100mA Features ● Low VCE(SAT) -0.36 @ IC / IB = -4A / -100mA (Typ.) ● Complementary part with TSD2118 Ordering Information Part No. Package Packing TSB1412CP RO TO-252 2.5Kpcs / 13” Reel TSB1412CP ROG TO-252 2.5Kpcs / 13” Reel Note: “G” is denote Halogen Free Product. Structure ● Epitaxial Planar Type ● PNP Silicon Transistor Absolute Maximum Rating (TA=25 oC unless otherwise noted) Parameter Symbol Limit Unit Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -30 V Emitter-Base Voltage VEBO -6 V Collector Current DC IC -5 A Pulse -10 (note) Collector Power Dissipation Ta=25ºC PD 1 W Tc=25ºC 10 Operating Junction Temperature TJ +150 oC Operating Junction and Storage Temperature Range TSTG - 55 to +150 oC Note: Single pulse, Pw=10ms Electrical Specifications (TA=25 oC unless otherwise noted) Parameter Conditions Symbol Min Typ Max Unit Collector-Base Breakdown Voltage IC = -50uA, IE = 0 BVCBO -40 -- -- V Collector-Emitter Breakdown Voltage IC = -1mA, IB = 0 BVCEO -30 -- -- V Emitter-Base Breakdown Voltage IE = -50uA, IC = 0 BVEBO -6 -- -- V Collector Cutoff Current VCB = -25V, IE = 0 ICBO -- -- -0.5 uA Emitter Cutoff Current VEB = -5V, IC = 0 IEBO -- -- -0.5 uA Collector-Emitter Saturation Voltage IC / IB = -4A / -100mA *VCE(SAT) -- -0.36 -0.5 V DC Current Transfer Ratio VCE = -2V, IC = -500mA *hFE 180 -- 390 Transition Frequency VCE =-6V, IC=-50mA, f=30MHz fT -- 120 -- MHz Output Capacitance VCB = -20V, f=1MHz Cob -- 60 -- pF * Pulse Test: Pulse Width ≤380uS, Duty Cycle≤2% Pin Definition: 1. Base 2. Collector 3. Emitter |
Nº de peça semelhante - TSB1412_11 |
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Descrição semelhante - TSB1412_11 |
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