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TSC128D Folha de dados(PDF) 2 Page - Taiwan Semiconductor Company, Ltd

Nome de Peças TSC128D
Descrição Electrónicos  High Voltage NPN Transistor with Diode
Download  6 Pages
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Fabricante Electrônico  TSC [Taiwan Semiconductor Company, Ltd]
Página de início  http://www.taiwansemi.com
Logo TSC - Taiwan Semiconductor Company, Ltd

TSC128D Folha de dados(HTML) 2 Page - Taiwan Semiconductor Company, Ltd

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TSC128D
High Voltage NPN Transistor with Diode
2/6
Version: B11
Thermal Performance
Parameter
Symbol
Limit
Unit
Thermal Resistance - Junction to Case
TO-220
JC
1.78
oC/W
TO-263
1.78
Thermal Resistance - Junction to Ambient
TO-220
JA
62.5
oC/W
TO-263
62.5
Electrical Specifications (Ta = 25
oC unless otherwise noted)
Parameter
Conditions
Symbol
Min
Typ
Max
Unit
Static
Collector-Base Voltage
IC =1mA, IB =0
BVCBO
700
--
--
V
Collector-Emitter Breakdown Voltage
IC =10mA, IE =0
BVCEO
400
--
--
V
Emitter-Base Breakdown Voltage
IE =1mA, IC =0
BVEBO
9
--
--
V
Collector Cutoff Current
VCB =700V, IE =0
ICBO
--
--
100
uA
Collector Cutoff Current
VCE =400V, IB =0
ICEO
--
--
250
uA
Emitter Cutoff Current
VEB =7V, IC =0
IEBO
--
--
10
uA
Collector-Emitter Saturation Voltage
IC =0.5A, IB =0.1A
VCE(SAT)1
--
0.25
0.7
V
IC =1A, IB =0.2A
VCE(SAT)2
--
0.5
1
IC =2.5A, IB =0.5A
VCE(SAT)3
--
1.2
1.5
IC =4A, IB =1A
VCE(SAT)4
--
0.5
--
Base-Emitter Saturation Voltage
IC =1A, IB =0.2A
VBE(SAT)1
--
--
1.1
V
IC =2A, IB =0.5A
VBE(SAT)2
--
--
1.2
DC Current Gain
VCE =5V, IC =10mA
Hfe
10
--
--
VCE =5V, IC =1A
17
--
27
VCE =5V, IC =2A
12
--
32
Forward Voltage Drop
IF =2A
Vf
--
--
2
V
Turn On Time
VCC =250V, IC =1A,
IB1=IB2=0.2A, tp=25uS
Duty Cycle<1%
tON
--
0.2
0.6
uS
Storage Time
tSTG
--
3.0
4.5
uS
Fall Time
tf
--
0.2
0.3
uS
Notes: Pulsed duration =380uS, duty cycle ≤2%


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