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STD8N65M5 Folha de dados(PDF) 8 Page - STMicroelectronics

Nome de Peças STD8N65M5
Descrição Electrónicos  N-channel 650 V, 0.56 廓, 7 A MDmesh??V Power MOSFET
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Fabricante Electrônico  STMICROELECTRONICS [STMicroelectronics]
Página de início  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STD8N65M5 Folha de dados(HTML) 8 Page - STMicroelectronics

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Electrical characteristics
STB/D/F/I/P/U8N65M5
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Doc ID 16531 Rev 3
Figure 14.
Normalized gate threshold voltage
vs temperature
Figure 15.
Normalized on resistance vs
temperature
Figure 16.
Switching losses vs gate resistance
(1)
Figure 17.
Normalized BVDSS vs temperature
1.
Eon including reverse recovery of a SiC diode
VGS(th)
1.00
0.90
0.80
0.70
-50
0
TJ(°C)
(norm)
-25
1.10
75
25
50
100
AM08204v1
RDS(on)
2.0
1.5
0.5
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
1.0
ID=3.5A
VGS=10V
AM08205v1
E
100
10
1
0
20
RG(
Ω)
(
μJ)
10
30
40
ID=4A
VCL=400V
VGS=10V
Eon
Eoff
AM08206v1
BVDSS
-50
0
TJ(°C)
(norm)
-25
75
25
50
100
0.93
0.95
0.97
0.99
1.01
1.03
1.05
1.07
ID=1mA
AM08203v1


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