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1N5059 Folha de dados(PDF) 1 Page - Diotec Semiconductor

Nome de Peças 1N5059
Descrição Electrónicos  Silicon Rectifier Diodes ??Silizium-Gleichrichterdioden
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Fabricante Electrônico  DIOTEC [Diotec Semiconductor]
Página de início  http://www.diotec.com
Logo DIOTEC - Diotec Semiconductor

1N5059 Folha de dados(HTML) 1 Page - Diotec Semiconductor

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1N5059 ... 1N5062
1N5059 ... 1N5062
Silicon Rectifier Diodes – Silizium-Gleichrichterdioden
Version 2005-09-20
Dimensions - Maße [mm]
Nominal current
Nennstrom
2 A
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
200...800 V
Plastic case
Kunststoffgehäuse
DO-15
DO-204AC
Weight approx.
Gewicht ca.
0.4 g
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
Maximum ratings
Grenzwerte
Type
Typ
Repetitive peak reverse voltage
Periodische Spitzensperrspannung
VRRM [V]
Surge peak reverse voltage
Stoßspitzensperrspannung
VRSM [V]
1N5059
200
200
1N5060
400
400
1N5061
600
600
1N5062
800
800
Max. average forward rectified current, R-load
Dauergrenzstrom in Einwegschaltung mit R-Last
TA = 50°C
IFAV
2 A 1)
Repetitive peak forward current
Periodischer Spitzenstrom
f > 15 Hz
IFRM
10 A 1)
Peak forward surge current, 50/60 Hz half sine-wave
Stoßstrom für eine 50/60 Hz Sinus-Halbwelle
TA = 25°C
IFSM
50/55 A
Rating for fusing, t < 10 ms
Grenzlastintegral, t < 10 ms
TA = 25°C
i2t
12.5 A2s
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
Tj
TS
-50...+150°C
-50...+175°C
1
Valid, if leads are kept at ambient temperature at a distance of 10 mm from case
Gültig, wenn die Anschlussdrähte in 10 mm Abstand von Gehäuse auf Umgebungstemperatur gehalten werden
© Diotec Semiconductor AG
http://www.diotec.com/
1
Ø
±0.05
0.8
Ø ±0.05
3


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