2N3906 datasheet(2/2 Pages) DIOTEC

Nome de Peças	2N3906

Descrição Electrónicos	Si-Epitaxial-Planar Switching Transistors

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Fabricante Electrônico	DIOTEC [Diotec Semiconductor]

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2N3906

Characteristics (Tj = 25°C)

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom

- VCE = 30 V, - VEB = 3 V

- ICBX

–

50 nA

Emitter-Base cutoff current – Emitter-Basis-Reststrom

- VCE = 30 V, - VEB = 3 V

- IEBV

–

–-

50 nA

Gain-Bandwidth Product – Transitfrequenz

- IC = 10 mA, - VCE = 20 V, f = 100 MHz

fT

250 MHz

–

Collector-Base Capacitance – Kollektor-Basis-Kapazität

- VCB = 5 V, IE = ie = 0, f = 1 MHz

CCBO

–

4.5 pF

Emitter-Base Capacitance – Emitter-Basis-Kapazität

- VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

–

10 pf

Noise figure – Rauschzahl

- VCE = 5 V, - IC = 100 µA, RG = 1 kΩ, f = 1 kHz

F

–

4 dB

Switching times – Schaltzeiten (between 10% and 90% levels)

delay time

rise time

- VCC = 3 V, - VBE = 0.5 V

- IC = 10 mA, - IB1 = 1mA

td

–

35 ns

tr

–

35 ns

storage time

fall time

- VCC = 3 V, - IC = 10 mA,

- IB1 = - IB2 = 1 mA

ts

–

225 ns

tf

–

75 ns

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

< 200 K/W 1)

Recommended complementary NPN transistors

Empfohlene komplementäre NPN-Transistoren

2N3904

1

Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

http://www.diotec.com/

Nº de peça semelhante - 2N3906

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Descrição semelhante - 2N3906

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Nº de peça semelhante - 2N3906

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