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FM25L04B-G Folha de dados(PDF) 1 Page - Ramtron International Corporation |
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FM25L04B-G Folha de dados(HTML) 1 Page - Ramtron International Corporation |
1 / 14 page Preliminary This is a product that has fixed target specifications but are subject Ramtron International Corporation to change pending characterization results. 1850 Ramtron Drive, Colorado Springs, CO 80921 (800) 545-F-RAM, (719) 481-7000 www.ramtron.com Rev. 1.3 Feb. 2011 Page 1 of 14 FM25L04B 4Kb Serial 3V F-RAM Memory Features 4K bit Ferroelectric Nonvolatile RAM • Organized as 512 x 8 bits • High Endurance 100 Trillion (1014) Read/Writes • 38 Year Data Retention (@ +75ºC) • NoDelay™ Writes • Advanced High-Reliability Ferroelectric Process Very Fast Serial Peripheral Interface - SPI • Up to 20 MHz Frequency • Direct Hardware Replacement for EEPROM • SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1) Sophisticated Write Protection Scheme • Hardware Protection • Software Protection Low Power Consumption • Low Voltage Operation 2.7-3.6V • 200 µA Active Current (1 MHz) • 3 µA (typ.) Standby Current Industry Standard Configuration • Industrial Temperature -40 °C to +85°C • 8-pin “Green”/RoHS SOIC and TDFN Packages Description The FM25L04B is a 4-kilobit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes like a RAM. It provides reliable data retention for 38 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other nonvolatile memories. The FM25L04B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte has been transferred to the device. The next bus cycle may commence without the need for data polling. The FM25L04B is capable of supporting 1014 read/write cycles, or a million times more write cycles than EEPROM. These capabilities make the FM25L04B ideal for nonvolatile memory applications requiring frequent or rapid writes or low power operation. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The FM25L04B provides substantial benefits to users of serial EEPROM as a hardware drop-in replacement. The FM25L04B uses the high-speed SPI bus, which enhances the high-speed write capability of F-RAM technology. Device specifications are guaranteed over an industrial temperature range of -40°C to +85°C. Pin Configuration Pin Name Function /CS Chip Select /WP Write Protect /HOLD Hold SCK Serial Clock SI Serial Data Input SO Serial Data Output VDD Supply Voltage VSS Ground Ordering Information FM25L04B-G “Green”/RoHS 8-pin SOIC FM25L04B-GTR “Green”/RoHS 8-pin SOIC, Tape & Reel FM25L04B-DG “Green”/RoHS 8-pin TDFN FM25L04B-DGTR “Green”/RoHS 8-pin TDFN, Tape & Reel /CS SO /WP VSS VDD /HOLD SCK SI 8 7 6 5 1 2 3 4 Top View CS SO WP VSS VDD HOLD SCK SI 1 2 3 4 8 7 6 5 |
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Descrição semelhante - FM25L04B-G |
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