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FM25L04B-G Folha de dados(PDF) 1 Page - Ramtron International Corporation

Nome de Peças FM25L04B-G
Descrição Electrónicos  4Kb Serial 3V F-RAM Memory
Download  14 Pages
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Fabricante Electrônico  RAMTRON [Ramtron International Corporation]
Página de início  http://www.ramtron.com
Logo RAMTRON - Ramtron International Corporation

FM25L04B-G Folha de dados(HTML) 1 Page - Ramtron International Corporation

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Preliminary
This is a product that has fixed target specifications but are subject
Ramtron International Corporation
to change pending characterization results.
1850 Ramtron Drive, Colorado Springs, CO 80921
(800) 545-F-RAM, (719) 481-7000
www.ramtron.com
Rev. 1.3
Feb. 2011
Page 1 of 14
FM25L04B
4Kb Serial 3V F-RAM Memory
Features
4K bit Ferroelectric Nonvolatile RAM
Organized as 512 x 8 bits
High Endurance 100 Trillion (1014) Read/Writes
38 Year Data Retention (@ +75ºC)
NoDelay™ Writes
Advanced High-Reliability Ferroelectric Process
Very Fast Serial Peripheral Interface - SPI
Up to 20 MHz Frequency
Direct Hardware Replacement for EEPROM
SPI Mode 0 & 3 (CPOL, CPHA=0,0 & 1,1)
Sophisticated Write Protection Scheme
Hardware Protection
Software Protection
Low Power Consumption
Low Voltage Operation 2.7-3.6V
200
µA Active Current (1 MHz)
3
µA (typ.) Standby Current
Industry Standard Configuration
Industrial Temperature -40
°C to +85°C
8-pin “Green”/RoHS SOIC and TDFN Packages
Description
The FM25L04B is a 4-kilobit nonvolatile memory
employing an advanced ferroelectric process. A
ferroelectric random access memory or F-RAM is
nonvolatile and performs reads and writes like a
RAM. It provides reliable data retention for 38 years
while eliminating the complexities, overhead, and
system level
reliability
problems
caused
by
EEPROM and other nonvolatile memories.
The FM25L04B performs write operations at bus
speed. No write delays are incurred. Data is written to
the memory array immediately after each byte has
been transferred to the device. The next bus cycle
may commence without the need for data polling.
The FM25L04B is capable of supporting 1014
read/write cycles, or a million times more write
cycles than EEPROM.
These capabilities make the FM25L04B ideal for
nonvolatile memory applications requiring frequent
or rapid writes or low power operation. Examples
range from data collection, where the number of
write cycles may be critical, to demanding industrial
controls where the long write time of EEPROM can
cause data loss.
The FM25L04B provides substantial benefits to users
of serial
EEPROM
as
a
hardware
drop-in
replacement. The FM25L04B uses the high-speed
SPI bus, which enhances the high-speed write
capability
of
F-RAM
technology.
Device
specifications are guaranteed over an industrial
temperature range of -40°C to +85°C.
Pin Configuration
Pin Name
Function
/CS
Chip Select
/WP
Write Protect
/HOLD
Hold
SCK
Serial Clock
SI
Serial Data Input
SO
Serial Data Output
VDD
Supply Voltage
VSS
Ground
Ordering Information
FM25L04B-G
“Green”/RoHS 8-pin SOIC
FM25L04B-GTR
“Green”/RoHS 8-pin SOIC,
Tape & Reel
FM25L04B-DG
“Green”/RoHS 8-pin TDFN
FM25L04B-DGTR
“Green”/RoHS 8-pin TDFN,
Tape & Reel
/CS
SO
/WP
VSS
VDD
/HOLD
SCK
SI
8
7
6
5
1
2
3
4
Top View
CS
SO
WP
VSS
VDD
HOLD
SCK
SI
1
2
3
4
8
7
6
5


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