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2SA1552 Folha de dados(PDF) 2 Page - Sanyo Semicon Device

Nome de Peças 2SA1552
Descrição Electrónicos  High-Voltage Switching Applications
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Fabricante Electrônico  SANYO [Sanyo Semicon Device]
Página de início  https://www.sanyo-av.com/us/
Logo SANYO - Sanyo Semicon Device

2SA1552 Folha de dados(HTML) 2 Page - Sanyo Semicon Device

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2SA1552 / 2SC4027
No.2262-2/5
Electrical Characteristics
at Ta=25°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)120V, IE=0A
(--)1.0
μA
Emitter Cutoff Current
IEBO
VEB=(--)4V, IC=0A
(--)1.0
μA
DC Current Gain
hFE1VCE=(--)5V, IC=(--)100mA
100*
400*
hFE2VCE=(--)5V, IC=(--)10mA
80
Gain-Bandwidth Product
fT
VCE=(--)10V, IC=(--)50mA
120
MHz
Output Capacitance
Cob
VCB=(--)10V, f=1MHz
(22)12
pF
Collector-to-Emitter Saturation Voltage
VCE(sat)
IC=(--)500mA, IB=(--)50mA
(--0.2)0.13
(--0.5)0.45
V
Base-to-Emitterr Saturation Voltage
VBE(sat)
IC=(--)500mA, IB=(--)50mA
(--)0.85
(--)1.2
V
Collector-to-Base Breakdown Voltage
V(BR)CBO
IC=(--)10μA, IE=0A
(--)180
V
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
IC=(--)1mA, RBE=∞
(--)160
V
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IE=(--)10μA, IC=0A
(--)6
V
Turn-On Time
ton
See specified Test Circuit.
60
ns
Storage Time
tstg
See specified Test Circuit.
(0.7)1.2
μs
Fall Time
tf
See specified Test Circuit.
(50)80
ns
* ; The 2SA1552 / 2SC4027 are classified by 100mA hFE as follws:
Rank
R
S
T
hFE
100 to 200
140 to 280
200 to 400
Package Dimensions
Package Dimensions
unit : mm (typ)
unit : mm (typ)
7518-003
7003-003
Switching Time Test Circuit
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6
0.5
2.3
2.3
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
VR
RL
14kΩ
100V
--5V
10IB1= --10IB2=IC=0.7A
For PNP, the polarity is reversed.
++
50Ω
INPUT
OUTPUT
RB
100μF 470μF
PW=20μs
IB1
IB2
D.C.≤1%
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
2.3
2.3
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA


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