Os motores de busca de Datasheet de Componentes eletrônicos |
|
BA782S-V Folha de dados(PDF) 1 Page - Vishay Siliconix |
|
BA782S-V Folha de dados(HTML) 1 Page - Vishay Siliconix |
1 / 3 page Band Switching Diodes BA782S-V, BA783S-V Vishay Semiconductors Document Number: 85709 For technical questions within your region, please contact one of the following: www.vishay.com Rev. 1.6, 05-Aug-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1 MECHANICAL DATA Case: SOD-323 Weight: approx. 4.3 mg Packaging codes/options: GS18/10K per 13" reel (8 mm tape), 10K/box GS08/3K per 7" reel (8 mm tape), 15K/box FEATURES • These diodes are also available in SOD-123 case with the type designations BA782-V and BA783-V • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC DESCRIPTION Silicon epitaxial planar diode switches For electric bandswitching in radio and TV tuners in the frequency range of (50 to 1000) MHz. The dynamic forward resistance is constant and very small over a wide range of frequency and forward current. The reverse capacitance is also small and largely independent of the reverse voltage. 20145 PARTS TABLE PART ORDERING CODE TYPE MARKING REMARKS BA782S-V BA782S-V-GS18 or BA782S-V-GS08 R2 Tape and reel BA783S-V BA783S-V-GS18 or BA783S-V-GS08 R3 Tape and reel ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT Reverse voltage VR 35 V Forward continuous current IF 100 mA THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL VALUE UNIT Junction temperature Tj 125 °C Storage temperature range Tstg - 55 to + 150 °C ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT Forward voltage IF = 100 mA VF 1000 mV Reverse current VR = 20 V IR 50 nA Diode capacitance f = 1 MHz, VR = 1 V CD1 1.5 pF f = 1 MHz, VR = 3 V BA782S-V CD2 1.25 pF BA783S-V CD2 1.2 pF Dynamic forward resistance f = (50 to 1000) MHz, IF = 3 mA BA782S-V rf1 0.7 Ω BA783S-V rf1 1.2 Ω f = (50 to 1000) MHz, IF = 10 mA BA782S-V rf2 0.5 Ω BA783S-V rf2 0.9 Ω Series inductance across case LS 2.5 nH |
Nº de peça semelhante - BA782S-V |
|
Descrição semelhante - BA782S-V |
|
|
Ligação URL |
Privacy Policy |
ALLDATASHEETPT.COM |
ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |