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BA782S-V Folha de dados(PDF) 1 Page - Vishay Siliconix

Nome de Peças BA782S-V
Descrição Electrónicos  Band Switching Diodes
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
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BA782S-V Folha de dados(HTML) 1 Page - Vishay Siliconix

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Band Switching Diodes
BA782S-V, BA783S-V
Vishay Semiconductors
Document Number: 85709
For technical questions within your region, please contact one of the following:
www.vishay.com
Rev. 1.6, 05-Aug-10
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
MECHANICAL DATA
Case: SOD-323
Weight: approx. 4.3 mg
Packaging codes/options:
GS18/10K per 13" reel (8 mm tape), 10K/box
GS08/3K per 7" reel (8 mm tape), 15K/box
FEATURES
• These diodes are also available in SOD-123
case with the type designations BA782-V and
BA783-V
• AEC-Q101 qualified
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
DESCRIPTION
Silicon epitaxial planar diode switches
For electric bandswitching in radio and TV tuners in the
frequency range of (50 to 1000) MHz. The dynamic forward
resistance is constant and very small over a wide range of
frequency and forward current. The reverse capacitance is
also small and largely independent of the reverse voltage.
20145
PARTS TABLE
PART
ORDERING CODE
TYPE MARKING
REMARKS
BA782S-V
BA782S-V-GS18 or BA782S-V-GS08
R2
Tape and reel
BA783S-V
BA783S-V-GS18 or BA783S-V-GS08
R3
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITIONS
SYMBOL
VALUE
UNIT
Reverse voltage
VR
35
V
Forward continuous current
IF
100
mA
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
- 55 to + 150
°C
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA
VF
1000
mV
Reverse current
VR = 20 V
IR
50
nA
Diode capacitance
f = 1 MHz, VR = 1 V
CD1
1.5
pF
f = 1 MHz, VR = 3 V
BA782S-V
CD2
1.25
pF
BA783S-V
CD2
1.2
pF
Dynamic forward resistance
f = (50 to 1000) MHz, IF = 3 mA
BA782S-V
rf1
0.7
Ω
BA783S-V
rf1
1.2
Ω
f = (50 to 1000) MHz, IF = 10 mA
BA782S-V
rf2
0.5
Ω
BA783S-V
rf2
0.9
Ω
Series inductance across case
LS
2.5
nH


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