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2SC2497A Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC2497A Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC2497 2SC2497A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT 2SC2497 50 V(BR)CEO Collector-emitter breakdown voltage 2SC2497A IC=2mA ; IB=0 60 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 70 V VCEsat Collector-emitter saturation voltage IC=1.5A ;IB=0.15A 1.0 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=0.15A 1.5 V ICEO Collector cut-off current VCE=10V; IB=0 100 μA ICBO Collector cut-off current VCB=20V; IE=0 1 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE DC current gain IC=1A ; VCE=5V 80 220 COB Output capacitance IE=0 ; VCB=20V,f=1MHz 35 pF fT Transition frequency IE=0.5A ; VCB=5V,f=200MHz 150 MHz hFE Classifications R S 80-160 120-220 |
Nº de peça semelhante - 2SC2497A |
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Descrição semelhante - 2SC2497A |
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