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2SC3365 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3365 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 4 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SC3365 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A ;RBE=∞,L=100mH 400 V V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 10 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1A 1.0 V VBEsat Base-emitter saturation voltage IC=5A ;IB=1A 1.5 V ICBO Collector cut-off current VCB=400V; IE=0 50 μA ICEO Collector cut-off current VCE=350V; RBE=∞ 50 μA hFE-1 DC current gain IC=5A ; VCE=5V 12 hFE-2 DC current gain IC=10A ; VCE=5V 5 Switching times resistive load ton Turn-on time 1.0 μs ts Storage time 2.5 μs tf Fall time IC=10A; IB1=-IB2=2A VCC≈150V 1.0 μs |
Nº de peça semelhante - 2SC3365 |
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Descrição semelhante - 2SC3365 |
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