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2SC3376 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SC3376 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3376 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 0.6 V VBE(sat) Base-Emitter Saturation Voltage IC= 0.8A; IB= 0.16A 1.2 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 1.0 mA hFE DC Current Gain IC= 0.8A; VCE= 5V 10 Switching Times; Resistive Load tr Rise Time 1.0 μs ts Storage Time 4.0 μs tf Fall Time IB1= 0.08A; IB2= -0.2A; VCC≈ 400V; RL= 500Ω 1.0 μs isc Website:www.iscsemi.cn |
Nº de peça semelhante - 2SC3376 |
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Descrição semelhante - 2SC3376 |
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