2SC3590 datasheet(1/2 Pages) ISC

Nome de Peças	2SC3590

Descrição Electrónicos	isc Silicon NPN Power Transistors

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Fabricante Electrônico	ISC [Inchange Semiconductor Company Limited]

Página de início	http://www.iscsemi.cn

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INCHANGE Semiconductor

isc Product Specification

isc Silicon NPN Power Transistors

2SC3590

DESCRIPTION

·Collector-Emitter Breakdown Voltage-

: V(BR)CEO= 150V(Min)

·Fast Switching Speed

·Low Saturation Voltage

APPLICATIONS

·Designed for high definition CRT display horizontal deflection

output applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

330

V

VCEO

Collector-Emitter Voltage

150

V

VEBO

Emitter-Base Voltage

6

V

IC

Collector Current-Continuous

7

A

ICM

Collector Current-Peak

12

A

IB

B

Base Current-Continuous

4

A

PT

Total Power Dissipation

@ TC=25℃

50

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

isc Website：www.iscsemi.cn

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2SC3590 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited

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