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2SD1577 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1577 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1577 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=2A 2.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A 1.3 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V VCB=750V; IE=0 50 μA ICBO Collector cut-off current VCB=1500V; IE=0 1 mA IEBO Emitter cut-off current VEB=5V; IC=0 50 μA hFE DC current gain IC=2A ; VCE=10V 4 15 Switching times tstg Storage time 11 μs tf Fall time IC=4A; LB=10μH IBend=1.5A 1 μs |
Nº de peça semelhante - 2SD1577 |
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Descrição semelhante - 2SD1577 |
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