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2SD1633 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SD1633 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD1633 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.2A , IB=0 100 V VCEsat Collector-emitter saturation voltage IC=3A; IB=3mA 1.5 V VBEsat Base-emitter saturation voltage IC=3A; IB=3mA 2.0 V ICBO Collector cut-off current VCB=100V;IE=0 100 μA ICEO Collector cut-off current VCE=100V; IB=0 100 μA IEBO Emitter cut-off current VEB=7V; IC=0 5 mA hFE DC current gain IC=3A ; VCE=3V 1500 10000 Switching times ton Turn-on time 3.0 μs ts Storage time 5.0 μs tf Fall time IC=3A ;IB1=3mA IB2=-3mA; VCC=50V 3.0 μs hFE Classifications Q P 1500-6000 5000-10000 |
Nº de peça semelhante - 2SD1633 |
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Descrição semelhante - 2SD1633 |
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