Os motores de busca de Datasheet de Componentes eletrônicos |
|
2SD2057 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
|
2SD2057 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors 2SD2057 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=5A; IB=1.2A 8.0 V VBEsat Base-emitter saturation voltage IC=5A; IB=1.2A 1.5 V VCB=1000V; IE=0 30 μA ICBO Collector cut-off current VCB=1500V; IE=0 0.3 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=5A ; VCE=10V 4.5 15 fT Transition frequency IC=1A ; VCE=10V;f=0.5MHz 2 MHz VF Diode forward voltage IC=-6A ;IB=0 -2.3 V ts Storage time 12 μs tf Fall time IC=5A;IB1=-IB2=1.2A;LLeak=5μH 0.8 μs |
Nº de peça semelhante - 2SD2057 |
|
Descrição semelhante - 2SD2057 |
|
|
Ligação URL |
Privacy Policy |
ALLDATASHEETPT.COM |
ALLDATASHEET é útil para você? [ DONATE ] |
Sobre Alldatasheet | Publicidade | Contato conosco | Privacy Policy | roca de Link | Lista de Fabricantes All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |