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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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BU706DF Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU706DF Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU706DF ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A ;IB= 0; L=25 mH B 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1.33A B 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1.33A B 1.3 V ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ 0.5 1.0 mA IEBO Emitter Cutoff Current VEB= 6V; IC=0 10 mA hFE DC Current Gain IC= 3A; VCE= 5V 2.25 VECF C-E Diode Forward Voltage IF= 3A 1.5 2.2 V IS/B Second Breakdown Current VCE= 300V; tp= 200μs 1.0 A Switching Times tf Fall Time 0.7 μs ts Storage Time IC= 3A; IB(end)= 1A; LB= 12μH 6.5 μs isc Website：www.iscsemi.cn 2 |
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