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BU826 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BU826 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU826 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 375 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 55mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 0.2A B 2.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 2.5A; IB= 55mA 2.2 V ICES Collector Cutoff Current VCE= RatedVCES; RBE= 0 VCE= RatedVCES; RBE= 0,TC= 125℃ 1.0 2.0 mA IEBO Emitter Cutoff Current VEB= 8V; IC= 0 150 mA Switching Times ton Turn-On Time 1.6 μs ts Storage Time 3.1 μs tf Fall Time VCC= 250V, IC= 2.5A, IB1= 55mA, IB2= -1A; tp= 20μs; Duty Cycle≤ 1% 1.2 μs isc Website:www.iscsemi.cn 2 |
Nº de peça semelhante - BU826 |
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Descrição semelhante - BU826 |
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