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BU2508DW Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited

Nome de Peças. BU2508DW
descrição  isc Silicon NPN Power Transistor
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Fbricantes  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BU2508DW Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited

  BU2508DW Datasheet HTML 1Page - Inchange Semiconductor Company Limited BU2508DW Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2508DW
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA ; IB= 0,L= 25mH
700
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 600mA; IC= 0
7.5
V
VCE(sat)
Collector-Emitter Saturation Voltage
IC= 4.5A; IB= 1.12A
1.0
V
VBE(sat)
Base-Emitter Saturation Voltage
IC= 4.5A; IB= 1.7A
1.1
V
ICES
Collector Cutoff Current
VCE= 1500V ; VBE= 0
VCE= 1500V ; VBE= 0; TC=125℃
1.0
2.0
mA
IEBO
Emitter Cutoff Current
VEB= 7.5V ; IC= 0
140
390
mA
hFE-1
DC Current Gain
IC= 1A ; VCE= 5V
13
hFE-2
DC Current Gain
IC= 4.5A ; VCE= 1V
4
7
VECF
C-E Diode Forward Voltage
IF= 4.5A
2.0
V
COB
Output Capacitance
IE= 0; VCB= 10V; ftest= 1MHz
80
pF
Switching times
tstg
Storage Time
6.0
μs
tf
Fall Time
IC= 4.5A , IB(end)= 1.1A; LB= 6μH
-VBB= 4V; (-dIB/dt= 0.6A/μs)
0.6
μs
isc Website:www.iscsemi.cn
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