![]() |
Os motores de busca de Datasheet de Componentes eletrônicos |
|
BU2508DW Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
BU2508DW Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2508DW DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Built-in Damper Diode APPLICATIONS ·Designed for use in horizontal deflection circuits of color TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1500 V VCEO Collector-Emitter Voltage 700 V VEBO Emitter-Base Voltage 7.5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 15 A IB B Base Current- Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @ TC=25℃ 125 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website:www.iscsemi.cn |
|