GT100DA60U

Insulated Gate Bipolar Transistor

(Trench IGBT), 100 A

Vishay Semiconductors

Document Number: 93185

For technical questions within your region, please contact one of the following:

www.vishay.com

Revision: 22-Jul-10

3

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

Fig. 2 - IGBT Reverse Bias SOA

Fig. 3 - Typical IGBT Collector Current Characteristics

Fig. 4 - Maximum DC Forward Current vs.

Case Temperature

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNITS

Maximum junction and storage temperature range

- 40

-

175

°C

Junction to case

IGBT

-

-

0.26

°C/W

Diode

-

-

0.73

Case to sink per module

-0.05-

Mounting torque, 6-32 or M3 screw

-

-

1.3

Nm

Weight

-

30

-

g

0

93185_01

20

40

60

100

140

180

80

120

160

200

0

180

160

100

120

140

20

40

60

80

1

10

100

1000

0.01

0.1

1

93185_02

1000

10

100

04.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

0

93185_02

300

100

200

275

75

175

250

50

150

225

25

125

T

T

T

80

60

40

20

100

120

0

100

160

180

0

40

60

140

80

120

20

93185_04