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BUF410 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited

Nome de Peças. BUF410
descrição  isc Silicon NPN Power Transistor
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Fbricantes  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUF410 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUF410 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUF410 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUF410
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.2A; IB= 0; L= 25mH
450
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 50mA; IC= 0
7
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
B
0.8
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 10A; IB= 2A
0.5
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 5A; IB= 0.5A
B
0.9
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 10A; IB= 2A
1.1
V
ICER
Collector Cutoff Current
VCE=VCEV; RBE= 100Ω
VCE=VCEV; RBE= 100Ω;TC=100℃
0.2
1.0
mA
ICEV
Collector Cutoff Current
VCE= VCEV; VBE= -1.5V
VCE= VCEV; VBE= -1.5V;TC=100℃
0.2
1.0
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
mA
Switching Times; Resistive Load
ts
Storage Time
0.8
μs
tf
Fall Time
IC= 5A;IB1= 0.5A;VCC= 50V;
VBB= -5V, RBB= 1.2Ω;L= 0.5mH
Vclamp= 400V
0.05
μs
isc Website:www.iscsemi.cn


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