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BUF410 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUF410 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUF410 DESCRIPTION ·High Voltage ·High Speed Switching APPLICATIONS ·Designed for use in high-frequency power supplies and motor control applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage VBE= -1.5V 850 V VCEO Collector-Emitter Voltage 450 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB B Base Current-Continuous 3 A IBM Base Current-peak 4.5 A PC Collector Power Dissipation @TC=25℃ 125 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W isc Website:www.iscsemi.cn |
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