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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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BUH313 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUH313 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUH313 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 600 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.75A 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.75A 1.3 V ICES Collector cut-off current VCE=1300V; VBE=0 0.2 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=5V 10 hFE-2 DC current gain IC=3A ; VCE=5V 5.5 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal resistance from junction to case 2.8 ℃/W |
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