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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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BUL38D Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUL38D Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUL38D CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; L=25mH 450 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 9 VCEsat-1 Collector-emitter saturation voltage IC=1A ;IB=0.2A 0.5 V VCEsat-2 Collector-emitter saturation voltage IC=2A ;IB=0.4A 0.7 V VCEsat-3 Collector-emitter saturation voltage IC=3A ;IB=0.75A 1.1 V VBEsat-1 Base-emitter saturation voltage IC=1A ;IB=0.2A 1.1 V VBEsat-2 Base-emitter saturation voltage IC=2A ;IB=0.4A 1.2 V ICES Collector cut-off current VCE=800V; VBE=0 TC=125℃ 100 500 μA ICEO Collector cut-off current VCE=450V; IB=0 250 μA hFE-1 DC current gain IC=10mA ; VCE=5V 10 hFE-2 DC current gain IC=0.5A ; VCE=5V 60 hFE-3 DC current gain IC=2A ; VCE=5V 13 32 VF Diode forward voltage IC=2A 1.5 V Switching times resistive load ts Storage time 1.0 2.2 μs tf Fall time VCC=150V ,IC=2.5A IB1=-IB2=0.5A;tp=30μs 0.8 μs hFE-1 classifications A B 13-23 22-32 |
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