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BUL416 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited

Nome de Peças. BUL416
descrição  isc Silicon NPN Power Transistor
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Fbricantes  ISC [Inchange Semiconductor Company Limited]
Página de início  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BUL416 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited

  BUL416 Datasheet HTML 1Page - Inchange Semiconductor Company Limited BUL416 Datasheet HTML 2Page - Inchange Semiconductor Company Limited  
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUL416
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 100mA; L= 25mH
800
V
V(BR)EBO
Emitter-Base Breakdown Voltage
IE= 10mA; IC= 0
9
V
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
B
1.5
V
VCE(sat)-2
Collector-Emitter Saturation Voltage
IC= 4A; IB= 1.33A
B
3.0
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 2A; IB= 0.4A
B
1.2
V
VBE(sat)-2
Base-Emitter Saturation Voltage
IC= 4A; IB= 1.33A
B
1.5
V
ICES
Collector Cutoff Current
VCE= 1600V; VBE= 0
VCE= 1600V; VBE= 0; TC= 125℃
0.1
0.5
mA
ICEO
Collector Cutoff Current
VCE= 800V; IB= 0
0.25
mA
hFE-1
DC Current Gain
IC= 10mA; VCE= 5V
10
hFE-2
DC Current Gain
IC= 0.7A; VCE= 5V
12
40
Switching Times, Inductive Load
ts
Storage Time
2.3
μs
tf
Fall Time
IC= 3A; VCL= 200V; L= 200μH;
IB1= 1A; VBE(off)= -5V; RBB= 0Ω
0.65
μs
hFE-2 Classifications
A
B
12-27
25-40
isc Website:www.iscsemi.cn


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