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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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BUL416 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUL416 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL416 ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 25mH 800 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 9 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.33A B 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.2 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 1.33A B 1.5 V ICES Collector Cutoff Current VCE= 1600V; VBE= 0 VCE= 1600V; VBE= 0; TC= 125℃ 0.1 0.5 mA ICEO Collector Cutoff Current VCE= 800V; IB= 0 0.25 mA hFE-1 DC Current Gain IC= 10mA; VCE= 5V 10 hFE-2 DC Current Gain IC= 0.7A; VCE= 5V 12 40 Switching Times, Inductive Load ts Storage Time 2.3 μs tf Fall Time IC= 3A; VCL= 200V; L= 200μH; IB1= 1A; VBE(off)= -5V; RBB= 0Ω 0.65 μs hFE-2 Classifications A B 12-27 25-40 isc Website：www.iscsemi.cn |
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