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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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BUL510 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUL510 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUL510 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0; L=25mH 450 V V(BR)EBO Emitter-base breakdwon voltage IE=10mA ;IC=0 9 V VCEsat-1 Collector-emitter saturation voltage IC=3A; IB=0.6A 0.8 V VCEsat-2 Collector-emitter saturation voltage IC=4A ;IB=0.8A 1.0 V VCEsat-3 Collector-emitter saturation voltage IC=5A ;IB=1.25A 1.5 V VBEsat-1 Base-emitter saturation voltage IC=3A ;IB=0.6A 1.2 V VBEsat-2 Base-emitter saturation voltage IC=5A; IB=1.25A 1.5 V ICES Collector cut-off current VCE=1000V; VBE=0 TC=125℃ 100 500 μA ICEO Collector cut-off current VCE=450V; IB=0 250 μA hFE-1 DC current gain IC=1A ; VCE=5V 15 45 hFE-2 DC current gain IC=10mA ; VCE=5V 10 Switching times inductive load ts Storage time 3.4 μs tf Fall time IC=4A ;VCL=300V IB1 =0.8A;IB2=-1.6A L=200μH 0.15 μs |
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