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BUT76 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUT76 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 3 page ![]() Inchange Semiconductor Product Specification 2 Silicon NPN Power Transistors BUT76 BUT76A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUT76 400 V(BR)CEO Collector-emitter breakdown voltage BUT76A IC=500mA ;LC=125mH 450 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 6 V BUT76 IC=6A ;IB=1.2A VCEsat Collector-emitter saturation voltage BUT76A IC=5A ;IB=1A 1.5 V BUT76 IC=6A ;IB=1.2A VBEsat Base-emitter saturation voltage BUT76A IC=5A ;IB=1A 1.6 V BUT76 VCE=850V; VBE=0 Tj=150℃ 0.5 2.0 ICES Collector cut-off current BUT76A VCE=1000V; VBE=0 Tj=150℃ 0.5 2.0 mA hFE DC current gain IC=8A ; VCE=3V 3.2 COB Output capacitance IE=0 ;VCB=10V;f=1MHz 150 pF fT Transition frequency IC=1A ;VCE=10V 7 MHz Switching times resistive load ton Turn-on time 1.0 μs ts Storage time 3.0 μs tf Fall time For BUT76 IC=6A ;IB1=-IB2=1.2A;VCE=150V For BUT76A IC=5A ;IB1=-IB2=1A;VCE=150V 0.8 μs |
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