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Os motores de busca de Datasheet de Componentes eletrônicos |
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Os motores de busca de Datasheet de Componentes eletrônicos |
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BUV82 Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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BUV82 Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
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INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUV82/83 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT BUV82 400 VCEO(SUS) Collector-Emitter Sustaining Voltage BUV83 IC= 0.1A ;IB= 0; L=25 mH B 450 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 4A; IB= 1.25A B 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 2.5A; IB= 0.5A 1.4 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 4A; IB= 1.25A B 1.6 v ICES Collector Cutoff Current VCE= VCESmax;VBE= 0 VCE= VCESmax;VBE= 0; TJ= 125℃ 1 2 mA IEBO Emitter Cutoff Current VEB= 10V; IC=0 10 mA hFE DC Current Gain IC= 0.6A; VCE= 5V 22 fT Current-Gain—Bandwidth Product IC= 0.2A ; VCE= 10V;ftest= 1MHz 6 MHz Switching Times; Resistive Load ton Turn-On Time 0.3 0.6 μs ts Storage Time 2.0 3.5 μs tf Fall Time IC= 2.5A; IB1= 0.5A;IB2= -1.0A; VCC= 250V 0.3 0.75 μs isc Website：www.iscsemi.cn 2 |
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