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BUV82 Folha de dados(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BUV82 Folha de dados(HTML) 1 Page - Inchange Semiconductor Company Limited |
1 / 2 page ![]() INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUV82/83 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)-BUV82 = 450V(Min)-BUV83 ·High Switching Speed APPLICATIONS ·Designed for use in converters, inverters, switching regula- tors, motor control systems and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT BUV82 850 VCES Collector- Emitter Voltage VBE=0 BUV83 1000 V BUV82 400 VCEO Collector-Emitter Voltage BUV83 450 V VEBO Emitter-Base Voltage 10 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB B Base Current-Continuous 2 A IBM Base Current-Peak 3 A PC Collector Power Dissipation @ TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.25 ℃/W isc Website:www.iscsemi.cn |
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