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IRFD020PBF Folha de dados(PDF) 2 Page - Vishay Siliconix

Nome de Peças IRFD020PBF
Descrição Electrónicos  Power MOSFET
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Fabricante Electrônico  VISHAY [Vishay Siliconix]
Página de início  http://www.vishay.com
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IRFD020PBF Folha de dados(HTML) 2 Page - Vishay Siliconix

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Document Number: 91465
2
S11-0915-Rev. A, 16-May-11
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
IRFD020, SiHFD020
Vishay Siliconix
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
 300 μs; duty cycle  2 %.
c. VDD = 25 V, starting TJ = 25 °C, L = 100 μH, Rg = 25 
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
RthJA
-
120
°C/W
SPECIFICATIONS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 μA
50
-
-
V
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 μA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 20 V
-
-
± 500
nA
Zero Gate Voltage Drain Current
IDSS
VDS = max. rating, VGS = 0 V
-
-
250
μA
VDS = max. rating x 0.8, VGS = 0 V, TC = 125
-
-
1000
On-State Drain Currentb
ID(on)
VGS = 10 V
VDS > ID(on) x RDS(on) max.
2.4
-
-
A
Drain-Source On-State Resistanceb
RDS(on)
VGS = 10 V
ID = 1.4 A
-
0.080
0.10
Forward Transconductanceb
gfs
VDS = 20 V, ID = 7.5 A
4.9
7.3
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz
-
400
-
pF
Output Capacitance
Coss
-
260
-
Reverse Transfer Capacitance
Crss
-44
-
Total Gate Charge
Qg
VGS = 10 V
ID = 15 A,
VDS = max. rating x 0.8
-16
24
nC
Gate-Source Charge
Qgs
-4.7
7.1
Gate-Drain Charge
Qgd
-4.7
7.1
Turn-On Delay Time
td(on)
VDD = 25 V, ID = 15 A,
Rg = 18 , RD = 1.7 
-8.7
13
ns
Rise Time
tr
-55
83
Turn-Off Delay Time
td(off)
-16
24
Fall Time
tf
-26
39
Internal Drain Inductance
LD
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.0
-
nH
Internal Source Inductance
LS
-6.0
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
2.4
A
Pulsed Diode Forward Currentc
ISM
--
19
Body Diode Voltagea
VSD
TC = 25 °C, IS = 2.4 A, VGS = 0 V
-
-
1.4
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 15 A, dI/dt = 100 A/μs
57
130
310
ns
Body Diode Reverse Recovery Charge
Qrr
0.17
0.34
0.85
μC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
D
S
G
S
D
G


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