BAR81W datasheet(2/4 Pages) SIEMENS

Nome de Peças	BAR81W

Descrição Electrónicos	Silicon RF Switching Diode Preliminary data (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)

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Fabricante Electrônico	SIEMENS [Siemens Semiconductor Group]

Página de início	http://www.siemens.com/

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BAR 81W

Semiconductor Group

Sep-04-1998

2

Electrical Characteristics at

TA = 25 °C, unless otherwise specified.

Parameter

Values

Symbol

Unit

typ.

max.

min.

Characteristics

-

nA

IR

Reverse current

VR = 20 V

20

0.93

VF

1

V

Forward voltage

IF = 100 mA

-

AC characteristics

Diode capacitance

VR = 1 V, f = 1 MHz

VR = 3 V, f = 1 MHz

CT

-

0.6

0.57

-

pF

Forward resistance

IF = 5 mA, f = 100 MHz

rf

-

0.7

-

Ω

0.15

-

nH

Series inductance

Ls

-

Configuration of the shunt-diode

- A perfect ground is essential for optimum isolation

- The anode pins should be used as passage for RF

Semiconductor Group

2

1998-11-01

Nº de peça semelhante - BAR81W

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Infineon Technologies A...	BAR81W	407Kb / 4P	Silicon RF Switching Diode Dec-20-2002
Guangdong Kexin Industr...	BAR81W	36Kb / 1P	Silicon RF Switching Diode
Infineon Technologies A...	BAR81W	75Kb / 6P	Silicon RF Switching Diode 2007-04-19
	BAR81W	824Kb / 6P	Silicon RF Switching Diode 2011-06-14
	BAR81WH6327	824Kb / 6P	Silicon RF Switching Diode 2011-06-14

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Descrição semelhante - BAR81W

Fabricante Electrônico	Nome de Peças	Folha de dados	Descrição Electrónicos
Siemens Semiconductor G...	BAR81	46Kb / 3P	Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss)
	BAR80	68Kb / 4P	Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss)
	BA892	15Kb / 3P	Silicon Rf Switching Diode Preliminary data
Zhejiang DongYa Electro...	SH-L	941Kb / 2P	Shunt
	SH-T	993Kb / 3P	Shunt
	SH-F	790Kb / 2P	Shunt
Solid States Devices, I...	SVR006	68Kb / 2P	PRECISION SHUNT REGULATOR DIODE
Solid States Devices, I...	SVR1009	68Kb / 2P	PRECISION SHUNT REGULATOR DIODE
Siemens Semiconductor G...	BAR65-02W	14Kb / 3P	Silicon RF Switching Diode Preliminary data (Low loss, low capacitance PIN-diode Band switch for TV-tuners)
Siemens Semiconductor G...	BAR65-03W	19Kb / 3P	Preliminary data Silicon RF Switching Diode (Low loss, low capacitance PIN-diode Band switch for TV-tuners)

More results

BAR81W Folha de dados(PDF) 2 Page - Siemens Semiconductor Group

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Nº de peça semelhante - BAR81W

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