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MJE340T Folha de dados(PDF) 2 Page - Inchange Semiconductor Company Limited |
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MJE340T Folha de dados(HTML) 2 Page - Inchange Semiconductor Company Limited |
2 / 2 page INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor MJE340T ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 1.0mA; IB= 0 B 300 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1.0mA; IE= 0 300 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1.0mA; IC= 0 3 V VCE(sat) Collector-Emitter Saturation Voltage IC= 50mA ;IB= 5mA B 1.0 V ICBO Collector Cutoff Current VCB= 300V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 3V; IC= 0 0.1 mA hFE DC Current Gain IC= 50m A ; VCE= 10V 100 240 isc Website:www.iscsemi.cn |
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Descrição semelhante - MJE340T |
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