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Document Number 81142

Rev. 1.1, 13-May-11

SD103AWS-V-G, SD103BWS-V-G, SD103CWS-V-G

Vishay Semiconductors

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This document is subject to change without notice.

Electrical Characteristics

Typical Characteristics

Parameter

Test condition

Part

Symbol

Min.

Typ.

Max.

Unit

Leakage current

SD103AWS-V-G

5µA

SD103BWS-V-G

5µA

SD103CWS-V-G

5µA

Forward voltage drop

370

mV

600

mV

Diode capacitance

50

pF

Reverse recovery time

10

ns

Figure 1. Typical Variation of Forward Current vs. Forward

Voltage

Figure 2. Typical High Current Forward Conduction Curve

18488

0.01

1000

100

0.1

1

10

0

0.4

0.6

0.8

1.0

0.2

18489

4

5

3

2

0

1

0.5

1.0

01.5

duty cycle = 2 %

Figure 3. Typical Variation of Reverse Current at Various

Temperatures

Figure 4. Diode Capacitance vs. Reverse Voltage

0.01

0.1

1

10

100

1000

0

5

10 15 20 25 30 35 40 45 50

V - Reverse Voltage (V)

R

20084

75 °C

50 °C

25 °C

100 °C

18491

10

20

30

40

050

100

10

1