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SI1071X Folha de dados(PDF) 2 Page - Vishay Siliconix |
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SI1071X Folha de dados(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com Document Number: 65330 2 S09-1619-Rev. A, 31-Aug-09 SPICE Device Model Si1071X Vishay Siliconix Notes a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS SIMULATED DATA MEASURED DATA UNIT Static Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA 1 - V Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 0.96 A 0.121 0.139 Ω VGS = - 4.5 V, ID = - 0.90 A 0.139 0.147 Forward Transconductancea gfs VDS = - 15 V, ID = - 0.96 A 3.4 4.25 S Diode Forward Voltagea VSD IS = - 0.7 A - 0.77 - 0.80 V Dynamicb Input Capacitance Ciss VDS = - 15 V, VGS = 0 V, f = 1 MHz 313 315 pF Output Capacitance Coss 60 60 Reverse Transfer Capacitance Crss 45 45 Total Gate Charge Qg VDS = - 15 V, VGS = - 10 V, ID = - 0.96 A 7.3 8.87 nC VDS = - 15 V, VGS = - 4.5 V, ID = - 0.96 A 3.8 4.43 Gate-Source Charge Qgs 0.83 0.83 Gate-Drain Charge Qgd 1.57 1.57 |
Nº de peça semelhante - SI1071X_09 |
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Descrição semelhante - SI1071X_09 |
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